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SIZ340DT-T1-GE3(VishaySemiconductor) Specifications
Product Category: FETs - Arrays
Series: PowerPAIRR, TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Mounting-Style: SMD/SMT
Tradename: TrenchFET
Package-Case: 8-PowerWDFN
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: 8-Power33 (3x3)
Configuration: Dual
FET-Type: 2 N-Channel (Half Bridge)
Power-Max: 16.7W, 31W
Transistor-Type: 2 N-Channel
Drain-to-Source-Voltage-Vdss: 30V
Input-Capacitance-Ciss-Vds: 760pF @ 15V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 30A, 40A
Rds-On-Max-Id-Vgs: 9.5 mOhm @ 15.6A, 10V
Vgs-th-Max-Id: 2.4V @ 250μA
Gate-Charge-Qg-Vgs: 19nC @ 10V
Pd-Power-Dissipation: 16.7 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 7 ns
Rise-Time: 55 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 30 A
Vds-Drain-Source-Breakdown-Voltage: 30 V
Vgs-th-Gate-Source-Threshold-Voltage: 2.4 V
Rds-On-Drain-Source-Resistance: 9.5 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 16 ns
Typical-Turn-On-Delay-Time: 13 ns
Qg-Gate-Charge: 12.3 nC
Channel-Mode: Enhancement

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Part Number: SIZ340DT-T1-GE3
Manufacturer: VishaySemiconductor
Description: 100% Original Guarantee & Competitive price
Datasheet: SIZ340DT-T1-GE3 Datasheet
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