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SIS890DN-T1-GE3 Original Stock & Competitive Price

SIS890DN-T1-GE3(VISHAY ELECTRONIC GMBH) Specifications
Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SIS890DN-GE3
Mounting-Style: SMD/SMT
Tradename: ThunderFET TrenchFET
Package-Case: PowerPAKR 1212-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: PowerPAKR 1212-8
Configuration: Dual
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 52W
Transistor-Type: 2 N-Channel
Drain-to-Source-Voltage-Vdss: 100V
Input-Capacitance-Ciss-Vds: 802pF @ 50V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 30A (Tc)
Rds-On-Max-Id-Vgs: 23.5 mOhm @ 10A, 10V
Vgs-th-Max-Id: 3V @ 250μA
Gate-Charge-Qg-Vgs: 29nC @ 10V
Pd-Power-Dissipation: 52 W
Vgs-Gate-Source-Voltage: 3 V
Id-Continuous-Drain-Current: 30 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Vgs-th-Gate-Source-Threshold-Voltage: 3 V
Rds-On-Drain-Source-Resistance: 23.5 mOhms
Transistor-Polarity: N-Channel
Qg-Gate-Charge: 9.5 nC
Channel-Mode: Enhancement

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Part Number: SIS890DN-T1-GE3
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Manufacturer: VISHAY ELECTRONIC GMBH
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Datasheet: SIS890DN-T1-GE3 Datasheet
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