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SI7106DN-T1-E3 Original Stock & Competitive Price

SI7106DN-T1-E3(VISHAY ELECTRONIC GMBH) Specifications
Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7106DN-E3
Mounting-Style: SMD/SMT
Tradename: TrenchFET/PowerPAK
Package-Case: PowerPAKR 1212-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR 1212-8
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 1.5W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 12.5A (Ta)
Rds-On-Max-Id-Vgs: 6.2 mOhm @ 19.5A, 4.5V
Vgs-th-Max-Id: 1.5V @ 250μA
Gate-Charge-Qg-Vgs: 27nC @ 4.5V
Pd-Power-Dissipation: 1.5 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 15 ns
Rise-Time: 15 ns
Vgs-Gate-Source-Voltage: 12 V
Id-Continuous-Drain-Current: 12.5 A
Vds-Drain-Source-Breakdown-Voltage: 20 V
Rds-On-Drain-Source-Resistance: 6.2 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 50 ns
Typical-Turn-On-Delay-Time: 25 ns
Channel-Mode: Enhancement

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Part Number: SI7106DN-T1-E3
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Manufacturer: VISHAY ELECTRONIC GMBH
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Datasheet: SI7106DN-T1-E3 Datasheet
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