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SI3585CDV-T1-GE3 Original Stock & Competitive Price

Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI3585CDV-GE3
Unit-Weight: 0.000705 oz
Mounting-Style: SMD/SMT
Package-Case: SOT-23-6 Thin, TSOT-23-6
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: 6-TSOP
Configuration: 1 N-Channel 1 P-Channel
FET-Type: N and P-Channel
Power-Max: 1.4W, 1.3W
Transistor-Type: 1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: 150pF @ 10V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 3.9A, 2.1A
Rds-On-Max-Id-Vgs: 58 mOhm @ 2.5A, 4.5V
Vgs-th-Max-Id: 1.5V @ 250μA
Gate-Charge-Qg-Vgs: 4.8nC @ 10V
Pd-Power-Dissipation: 1.4 W 1.3 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 8 ns 7 ns
Rise-Time: 20 ns 10 ns
Vgs-Gate-Source-Voltage: 12 V
Id-Continuous-Drain-Current: 3.9 A - 2.1 A
Vds-Drain-Source-Breakdown-Voltage: 20 V
Vgs-th-Gate-Source-Threshold-Voltage: 1.5 V - 1.5 V
Rds-On-Drain-Source-Resistance: 58 mOhms 195 mOhms
Transistor-Polarity: N-Channel P-Channel
Typical-Turn-Off-Delay-Time: 11 ns 13 ns
Typical-Turn-On-Delay-Time: 5 ns 3 ns
Qg-Gate-Charge: 3.2 nC 6 nC
Forward-Transconductance-Min: 12 S 1 S

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Part Number: SI3585CDV-T1-GE3
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Datasheet: SI3585CDV-T1-GE3 Datasheet
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