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SI3443BDV-T1-E3 Original Stock & Competitive Price

SI3443BDV-T1-E3(VISHAY ELECTRONIC GMBH) Specifications
Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI3443BDV-E3
Unit-Weight: 0.000705 oz
Mounting-Style: SMD/SMT
Tradename: TrenchFET
Package-Case: SOT-23-6 Thin, TSOT-23-6
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: 6-TSOP
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 1.1W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 3.6A (Ta)
Rds-On-Max-Id-Vgs: 60 mOhm @ 4.7A, 4.5V
Vgs-th-Max-Id: 1.4V @ 250μA
Gate-Charge-Qg-Vgs: 9nC @ 4.5V
Pd-Power-Dissipation: 1.1 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 35 ns
Rise-Time: 35 ns
Vgs-Gate-Source-Voltage: 12 V
Id-Continuous-Drain-Current: 3.6 A
Vds-Drain-Source-Breakdown-Voltage: - 20 V
Rds-On-Drain-Source-Resistance: 60 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 45 ns
Typical-Turn-On-Delay-Time: 22 ns
Channel-Mode: Enhancement

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Part Number: SI3443BDV-T1-E3
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Manufacturer: VISHAY ELECTRONIC GMBH
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Datasheet: SI3443BDV-T1-E3 Datasheet
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