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STP80NF70(STMicroelectronics) Specifications
Manufacturer: ST
Product Category: FETs - Single
Series: N-channel STripFET
Packaging: Tube
Unit-Weight: 0.011640 oz
Mounting-Style: Through Hole
Package-Case: TO-220-3
Technology: Si
Number-of-Channels: 1 Channel
Configuration: Single
Transistor-Type: 1 N-Channel
Pd-Power-Dissipation: 190 W
Maximum-Operating-Temperature: + 175 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 75 ns
Rise-Time: 60 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 98 A
Vds-Drain-Source-Breakdown-Voltage: 68 V
Vgs-th-Gate-Source-Threshold-Voltage: 4 V
Rds-On-Drain-Source-Resistance: 9.8 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 90 ns
Typical-Turn-On-Delay-Time: 17 ns
Qg-Gate-Charge: 75 nC
Forward-Transconductance-Min: 60 S
Channel-Mode: Enhancement

Images are for reference only See Product Specifications
Part Number: STP80NF70
Manufacturer: STMicroelectronics
Description: IGBT Transistors MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II
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Datasheet: STP80NF70 Datasheet
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